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BLM2012E
產(chǎn)品特點(diǎn)：
Enhancement Mode Power MOSFET Description excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. |
 規(guī)格書(shū)下載 |
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BLM2010E
產(chǎn)品特點(diǎn)：
The BLM2010E uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications .It is ESD protested. |
規(guī)格書(shū)下載 |
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BLM2008E
產(chǎn)品特點(diǎn)：
The BLM2008E uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications .It is ESD protested. |
規(guī)格書(shū)下載 |
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BLDW01
產(chǎn)品特點(diǎn)：
此IC 持續(xù)偵測(cè)連接在VCC 和GND 之間的電池電壓，以及CS 與GND 之間的電壓差，來(lái)控制充電和放電。
當(dāng)電池電壓在過(guò)放電檢測(cè)電壓（VDL）以上并在過(guò)充電檢測(cè)電壓（VCU）以下，且CS 端子電壓在充電器檢測(cè)
電壓（VCH）以上并在放電過(guò)流檢測(cè)電壓（VOI1）以下時(shí)，IC 的OC 和OD 端子都輸出高電平，使充電控制用
MOSFET 和放電控制用MOSFET 同時(shí)導(dǎo)通，這個(gè)狀態(tài)稱(chēng)為正常工作狀態(tài)。此狀態(tài)下，充電和放電都可以自由進(jìn)
行。 |
規(guī)格書(shū)下載 |
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AEM_TF0603FF
產(chǎn)品特點(diǎn)：
Very fast acting at 200% overload current levels;? Low DCR; High inrush current withstanding capability; Fiberglass enforced epoxy fuse body; Copper termination with nickel and tin plating; Halogen free, RoHS compliance and lead-free |
規(guī)格書(shū)下載 |
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AEM_MLV_ESD-EMI
產(chǎn)品特點(diǎn)：
ESD protection and perfect filter performance (4 lines);Low leakage current; Low leakage Inductance and fast response; High density in integrated design and simplifying circuits design;? 100% lead-free and RoHS compliant |
規(guī)格書(shū)下載 |
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